PART |
Description |
Maker |
IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100 High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100 Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100 Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100 Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
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IDT Integrated Device Technology, Inc. SRAM
|
K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A40360 |
128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
CY7C1350B-133AI CY7C1350B-133AC CY7C1350B-166AC |
128Kx36 Pipelined SRAM with NoBL Architecture 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
KM736V795 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
GS8320Z36T-166V GS8320Z36T-133V GS8320Z36T-166VT G |
36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 7 ns, PQFP100 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 8.5 ns, PQFP100 1M X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100 1M X 36 ZBT SRAM, 7 ns, PQFP100 ROHS COMPLIANT, TQFP-100 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6.5 ns, PQFP100 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 5.5 ns, PQFP100 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 1M X 36 ZBT SRAM, 6 ns, PQFP100 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7 ns, PQFP100 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 8.5 ns, PQFP100 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 2M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc. Electronic Theatre Controls, Inc.
|
K7A403600B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
KM736V789 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水线脉冲静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM718FV4021H-5 KM718FV4021H-6 KM718FV4021H-7 KM736 |
(KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
GS8322ZV18GE-225 GS8322ZV18GE-225I GS8322ZV18GB-22 |
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 8.5 ns, PBGA209 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 7 ns, PBGA119 36Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 72 ZBT SRAM, 7 ns, PBGA209
|
GSI Technology, Inc.
|
GS8161Z18BT-150I GS8161Z18BGT-150 GS8161Z32BD-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 32 ZBT SRAM, 7.5 ns, PBGA165 18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512 |
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 8.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 51Vz 5mA-Izt 0.05 5uA-Ir 38.8Vr DO41-GLASS 5K/AMMO DIODE, ZENER, 24V, 5%, 1W& DIODE ZENER SINGLE 1000mW 33Vz 7.5mA-Izt 0.05 5uA-Ir 25.1Vr DO41-GLASS 5K/REEL NTD? Sync SRAM - 2.5V
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Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
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